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https://repositorio.ufba.br/handle/ri/7851| metadata.dc.type: | Artigo de Periódico |
| Title: | Effect of three-donor cluster on infrared absorption of semiconductor systems |
| Other Titles: | Solid State Communications |
| Authors: | Silva, A Ferreira da Canuto, Sylvio |
| metadata.dc.creator: | Silva, A Ferreira da Canuto, Sylvio |
| Abstract: | The density of states in n-doped Si in the intermediate impurity concentration range has been calculated for an interacting three-donor molecule. The results support the interpretation that the observed far infrared absorption at the energies below 30 meV is due to the electronic transition H? -+ H: from their impurity ground states. |
| Publisher: | Solid State Communications |
| URI: | http://www.repositorio.ufba.br/ri/handle/ri/7851 |
| Issue Date: | 1990 |
| Appears in Collections: | Artigo Publicado em Periódico (FIS) |
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