Influence of donor-pairs on density of states of degenerate N-type semiconductors

Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/7871

metadata.dc.type:	Artigo de Periódico
Title:	Influence of donor-pairs on density of states of degenerate N-type semiconductors
Other Titles:	Solid State Communications
Authors:	Mota, F. de Brito Silva, A. Ferreira da
metadata.dc.creator:	Mota, F. de Brito Silva, A. Ferreira da
Abstract:	The impurity density of states due to interacting donor-pairs are calculated for a random distribution of phosphorus in the many-valley silicon semiconductor, at densities around the metal-nonmetal transition. The results indicate that the donor-pairs play a relevant role in the optical absorption measurements of degenerate silicon.
Publisher:	Solid State Communications
URI:	http://www.repositorio.ufba.br/ri/handle/ri/7871
Issue Date:	1990
Appears in Collections:	Artigo Publicado em Periódico (FIS)

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