Impurity conductivities in compensated semiconductor systems

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Campo DC	Valor	Idioma
dc.contributor.author	Silva, A. Ferreira da	-
dc.creator	Silva, A. Ferreira da	-
dc.date.accessioned	2013-10-09T19:45:53Z	-
dc.date.available	2013-10-09T19:45:53Z	-
dc.date.issued	1993	-
dc.identifier.issn	1098-0121	-
dc.identifier.uri	http://www.repositorio.ufba.br/ri/handle/ri/13173	-
dc.description	p. 1921-1923	pt_BR
dc.description.abstract	In light of recent measurements of the transport properties in compensated semiconductor systems, we report a calculation for the low-temperature dc electrical conductivity of the systems Si:P and Ge:Sb as a function of concentration and compensation. The effects of disorder are taken into account in the calculation. With increasing compensation the conductivity follows the trend of the experimental results. For uncompensated systems the results agree fairly well with experiments.	pt_BR
dc.language.iso	en	pt_BR
dc.publisher	Physical Review B	pt_BR
dc.source	10.1103/PhysRevB.48.1921	pt_BR
dc.title	Impurity conductivities in compensated semiconductor systems	pt_BR
dc.title.alternative	Physical Review B	pt_BR
dc.type	Artigo de Periódico	pt_BR
dc.description.localpub	Salvador	pt_BR
dc.identifier.number	v. 48, n. 3	pt_BR
Aparece nas coleções:	Artigo Publicado em Periódico (FIS)

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